On  the low temperature resistivity measurement of CdSe thin film

H.O.Parmar; H.S.Patel; R.K.Shah

Title:
On the low temperature resistivity measurement of CdSe thin film

Authors:
R.K.Shah | H.O.Parmar | H.S.Patel
DOI:
https://doi.org/10.31142/ijtsrd65

Cite This Article :

R.K.Shah | H.O.Parmar | H.S.Patel "On the low temperature resistivity measurement of CdSe thin film" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-1 | Issue-2, February 2017, pp., URL: https://www.ijtsrd.com/papers/ijtsrd65.pdf

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Abstract :
Most group II-VI compounds are direct band gap semiconductors with high optical absorption and emission coefficients .Cadmium Selenide is a leading candidate with high potential towards many applications. The authors present their investigations dealing with preparation and some electrical characterization of the CdSe thin films. The films were deposited onto a well-cleaned glass substrates using thermal evaporation technique. The dependence of electrical resistivity of CdSe thin film in low temperature range has been studied.

Keywords :
Cadmium Selenide, thermal evaporation technique, thin film, electrical resistivity

Publication Details:

Unique Identification Number : IJTSRD65

Published In : Volume-1 | Issue-2, February 2017

Page Number(s) :

Publisher Name : IJTSRD | www.ijtsrd.com | E-ISSN 2456-6470

Copyright © 2019 by author(s) and International Journal of Trend in Scientific Research and Development Journal. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0) (http://creativecommons.org/licenses/by/4.0)

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