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International Journal of Trend in Scientific Research and Development (IJTSRD) @ www.ijtsrd.com eISSN: 2456-6470

When studying the APV effect in films of elementary from these materials makes it possible to obtain high-quality
semiconductors (Si, Ge, and Se) and binary semiconductor APV films with stable parameters for optoelectronic devices
compounds, it was found that films made of binary based on the APV effect.
compounds have relatively positive degradation
Physical methods for studying the composition of materials
characteristics. For example, in CdTe and Sb2Se3 APV films,
play the most important role in the study of the production
the aging rate occurs at a low rate.
technology of APV films.
Therefore, the choice of a suitable material and the
development of a technology for the production of APV films

Table 1
Sample number Substrate temperature Evaporation rate, mg / min Sample resistance, Ohm
5
К31 100 3 10
5
К51 150 3 10
5
К53 150 0,5 5×10
К45 200 5 10
5
К47 200 3 10
6
6
К67 250 1 5×10
6
К65 250 5 10
7
К72 300 0,5 10
К75 300 6 10
6
К81 350 5 10
6
7
К93 400 3 10
Table 1 lists some features and parameters of the evaporation process, as well as recommended evaporators for materials that
can be used in APV films of CdTe and Sb2Se3, comprehensive tests of APV films of CdTe and Sb2Se3 were not carried out,
however, taking into account that for a period equal to After several weeks, their abnormal high-voltage open-circuit
photovoltage and short-circuit current have decreased slightly, it can be assumed that these APV films are relatively stable.
Results
After analyzing the graphs of the temperature dependences, we can assume that the APV effect in films of the cadmium
telluride type is associated with the summation of the voltages of p – n junctions formed at the interface between the hexagonal
(0001) and cubic (111) phases. It should be noted that the APV effect in CdTe: Ag films and other complex semiconductor
compounds are also associated with the p-n transition mechanism [9-10].
The resistivity of the films, calculated from the measured value of ρ and the geometry of the films, is several orders of
magnitude higher than the resistivity of the starting material. This indicates the presence of high-resistance interlayers in APV
films. For the Dember mechanism of the APV effect, the role of such interlayers is fundamentally important, since they prevent
the exchange of current carriers between neighboring photo-active microelements. In films with the p-n transition mechanism
of the APV effect, the role of such interlayers is not fundamental. Thus, the film is a battery consisting of N active sections
separated by interlayers.

Figure 1 Optically controlled microcircuits: T-MOS transistor, FGT-photodetector of generator type with a thin-
layer APV-film.

Microelectronics is currently facing the problem of creating microcircuits operating in the nanowatt power range (about 10-9
W). Thus, it is quite clear that the creation of such microcircuits requires a radical revision of many traditional methods and
provisions.

ID: IJTSRD40077 | Special Issue on Innovative Development of Modern Research Page 122