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Discussion and Conclusions [4] Optical radiation detectors based on semiconductor
A striking example of this is the introduction of APV films films with anomalous high photovoltage / N.R.
together with MOS transistors in the technology of Rakhimov, D.D. Alizhanov // GEO - Siberia - 2010: a
manufacturing microcircuits in semiconductor instrument collection of works. materials VI Int. scientific. Congr.
making. In such microcircuits, power consumption is "GEO - Siberia - 2010", April 19 - 29, 2010,
reduced, efficiency is increased, and minimal heating of the Novosibirsk - Novosibirsk: SGGA, 2010. - Vol.5., Part 1.
MOS transistor is ensured, which leads to low gate leakage - P. 63 - 67.
currents and high input resistance. Microcircuits of this type [5] Photoelectric Phenomena in Semiconductors and
have a very high gain. They can have low noise and good
Optoelectronics, Ed. E.I. Adirovich. - Tashkent: FAN,
frequency response. High voltage gain can be obtained if the
gate voltage of the MOSFET is selected close to the cutoff 1972. P. 143–229
voltage. With the help of APV films, microcircuits on MOS [6] Rakhimov N.R., Optoelectronic sensors based on the
transistors become optically controlled. Opto-controlled AFN effect [Text]: monograph / N.R. Rakhimov, O. K.
microcircuits are non-volatile (Fig. 1). In conditions of solar Ushakov. - Novosibirsk: SGGA, 2010.- 218 p.
radiation, an external voltage source is not needed to power [7]
such microcircuits. Such microcircuits are of particular value Rakhimov N.R., Otazhonov S. M., Alizhanov D. D.
"Autonomous receiver of optical radiation based on
for microelectronics since they provide the ability to create
APS structures" FerGU, Fergana, 2011, pp. 214-217.
complex integrated circuits and blocks from homogeneous
components manufactured using a single technology. [8] Rakhimov, N. R., Turaev, B. E., &Ulugov, B. D.
“Оптоэлектронныеприборынаосновенанокристал-
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